| Universal front end module for networking device N Rohani, H Xu, Y Tan US Patent 8,364,102, 2013 | 158 | 2013 |
| The effect of gate leakage on the noise figure of AlGaN/GaN HEMTs C Sanabria, A Chakraborty, H Xu, MJ Rodwell, UK Mishra, RA York IEEE electron device letters 27 (1), 19-21, 2005 | 113 | 2005 |
| Tunable microwave integrated circuits using BST thin film capacitors with device structure optimization H Xu, NK Pervez, RA York Integrated Ferroelectrics 77 (1), 27-35, 2005 | 111 | 2005 |
| A flip-chip-packaged 25.3 dBm class-D outphasing power amplifier in 32 nm CMOS for WLAN application H Xu, Y Palaskas, A Ravi, M Sajadieh, MA El-Tanani, K Soumyanath IEEE Journal of Solid-State Circuits 46 (7), 1596-1605, 2011 | 108 | 2011 |
| A 2.4-GHz 20–40-MHz channel WLAN digital outphasing transmitter utilizing a delay-based wideband phase modulator in 32-nm CMOS A Ravi, P Madoglio, H Xu, K Chandrashekar, M Verhelst, S Pellerano, ... IEEE Journal of Solid-State Circuits 47 (12), 3184-3196, 2012 | 103 | 2012 |
| Monolithic flexible power amplifier using integrated tunable matching networks N Rohani, H Xu, Y Tan US Patent 7,567,129, 2009 | 97 | 2009 |
| A C-band high-dynamic range GaN HEMT low-noise amplifier H Xu, C Sanabria, A Chini, S Keller, UK Mishra, RA York IEEE Microwave and Wireless Components Letters 14 (6), 262-264, 2004 | 96 | 2004 |
| A high-efficiency class-E GaN HEMT power amplifier at 1.9 GHz H Xu, S Gao, S Heikman, SI Long, UK Mishra, RA York IEEE microwave and wireless components letters 16 (1), 22-24, 2005 | 90 | 2005 |
| A transformer-combined 31.5 dBm outphasing power amplifier in 45 nm LP CMOS with dynamic power control for back-off power efficiency enhancement W Tai, H Xu, A Ravi, H Lakdawala, O Bochobza-Degani, LR Carley, ... IEEE Journal of Solid-State Circuits 47 (7), 1646-1658, 2012 | 87 | 2012 |
| A 20dBm 2.4 GHz digital outphasing transmitter for WLAN application in 32nm CMOS P Madoglio, A Ravi, H Xu, K Chandrashekar, M Verhelst, S Pellerano, ... 2012 IEEE International Solid-State Circuits Conference, 168-170, 2012 | 54 | 2012 |
| 13.6 A 2.4 GHz WLAN digital polar transmitter with synthesized digital-to-time converter in 14nm trigate/FinFET technology for IoT and wearable applications P Madoglio, H Xu, K Chandrashekar, L Cuellar, M Faisal, WY Li, HS Kim, ... 2017 IEEE International Solid-State Circuits Conference (ISSCC), 226-227, 2017 | 53 | 2017 |
| Wi-Fi RF energy harvesting for battery-free wearable radio platforms V Talla, S Pellerano, H Xu, A Ravi, Y Palaskas 2015 IEEE International Conference on RFID (RFID), 47-54, 2015 | 46 | 2015 |
| Microwave class-F and inverse class-F power amplifiers designs using GaN technology and GaAs pHEMT S Gao, P Butterworth, A Sambell, C Sanabria, H Xu, S Heikman, U Mishra, ... 2006 European Microwave Integrated Circuits Conference, 493-496, 2006 | 46 | 2006 |
| A broadband switched-transformer digital power amplifier for deep back-off efficiency enhancement Y Yin, T Li, L Xiong, Y Li, H Min, N Yan, H Xu IEEE Journal of Solid-State Circuits 55 (11), 2997-3008, 2020 | 40 | 2020 |
| A compact dual-band digital doherty power amplifier using parallel-combining transformer for cellular NB-IoT applications Y Yin, L Xiong, Y Zhu, B Chen, H Min, H Xu 2018 IEEE International Solid-State Circuits Conference-(ISSCC), 408-410, 2018 | 36 | 2018 |
| A highly linear 25dBm outphasing power amplifier in 32nm CMOS for WLAN application H Xu, Y Palaskas, A Ravi, K Soumyanath 2010 Proceedings of ESSCIRC, 306-309, 2010 | 36 | 2010 |
| Integration of Ba/sub x/Sr/sub 1-x/TiO/sub 3/thin films with AlGaN/GaN HEMT circuits H Xu, NK Pervez, PJ Hansen, L Shen, S Keller, UK Mishra, RA York IEEE Electron Device Letters 25 (2), 49-51, 2004 | 36 | 2004 |
| A 28.1 dBm class-D outphasing power amplifier in 45nm LP digital CMOS H Xu, Y Palaskas, A Ravi, M Sajadieh, M Elmala, K Soumyanath 2009 Symposium on VLSI Circuits, 206-207, 2009 | 32 | 2009 |
| Two-stage quasi-class-E power amplifier in GaN HEMT technology S Gao, H Xu, S Heikman, UK Mishra, RA York IEEE Microwave and Wireless Components Letters 16 (1), 28-30, 2005 | 31 | 2005 |
| Influence of epitaxial structure in the noise figure of AlGaN/GaN HEMTs C Sanabria, H Xu, T Palacios, A Chakraborty, S Heikman, UK Mishra, ... IEEE transactions on microwave theory and techniques 53 (2), 762-769, 2005 | 31 | 2005 |
